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SI2301DS

Kexin
Part Number SI2301DS
Manufacturer Kexin
Description P-Channel MOSFET
Published Sep 15, 2019
Detailed Description SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-...
Datasheet PDF File SI2301DS PDF File

SI2301DS
SI2301DS


Overview
SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.
5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.
5V) G1 S2 3D +0.
22.
8 -0.
1 SOT-23-3 2.
9 +0.
2 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
2 +0.
21.
1 -0.
1 +0.
21.
6 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 1.
Gate 2.
Source 3.
Drain 0-0.
1 +0.
10.
68 -0.
1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.
Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t ≤ 5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
5 sec Steady State -20 ±8 -2.
4 -2.
2 -1.
9 -1.
8 -10 0.
9 0.
7 0.
57 0.
45 120 145 140 175 150 -55 to 150 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) On state drain current *1 Forward Transconductance *1 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Total Gate Charge *2 Gate Source Charge *2 Gate Drain Charge *2 Turn-On DelayTime *3 Turn-On Rise Time *3 Turn-Off DelayTime *3 Turn-Off Fall Time *3 Maximum Body-Diode Continuous Current Diode Forward Voltage ID(ON) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD Test Conditions ID=-250μA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55℃ VDS=0V, VGS=±8V VDS=VGS ID=-250μA VGS=-4.
5V, ID=-2.
8A VGS=-2.
5V, ID=-2.
0A VGS=-4.
5V, VDS ≤ -5V VGS=-2.
5V, VDS ≤ -5V VDS=-5V, ID=-2.
8A VGS=0V, VDS=-6V, f=1MHz VGS=-4.
5V, VDS=-6V, ID=-2.
8A VGS=-4.
5V, VDS=-6V, RL=6Ω,R...


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