DatasheetsPDF.com

HX3400

HXDZ
Part Number HX3400
Manufacturer HXDZ
Description P-Channel MOSFET
Published Sep 15, 2019
Detailed Description SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lea...
Datasheet PDF File HX3400 PDF File

HX3400
HX3400

Overview
SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage ±12 V ID Drain current 5.
8 A PD Power Dissipation 1.
4 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.
7 1.
0 1.
4 V Gate-body Leakage IGSS VDS=0V, VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA VGS=2.
5V, ID=4A 43 54 mΩ Drain-Source On-Resistance RDS(ON) VGS=4.
5V, ID=5A 28 35 mΩ VGS=10V, ID=5.
8A 24 39 mΩ Forward Trans conductance gfs VDS=5V, ID=5A 10 s Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz 823 99 pF 77 Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(on) tr td(off) tf VDD=15V, ID=2.
9A, VGS=10V RGEN=3Ω RGEN=2.
7Ω 3.
3 nS 4.
8 nS 26 nS 4 nS Total Gate Charge Gate-Source Charge Qg VDS=15V, ID=5.
8A, Qgs VGS=4.
5V, 9.
5 nC 1.
5 nC Gate-Drain Charge Qgd 3 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V, ID=1A 0.
71 1.
0 V Diode Forward Current Is 2.
5 A 1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)