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2SD256

Part Number	2SD256
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Sep 3, 2019
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SD256 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.
0 A ICM Collector Current-Peak 6.
0 A IB Base Current 1.
0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junctio...

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