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2SB611

Part Number	2SB611
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Sep 3, 2019
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB611 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet	2SB611 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB611 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0V(Max.
) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage T...

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