OPERATIONAL AMPLIFIER - Texas Instruments
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OPA659
SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015
OPA659 Wideband, Unity-Gain Stable, JFET-Input Operational Amplifier
1 Features
•1 High Bandwidth: 650 MHz (G = 1 V/V) • High Slew Rate: 2550 V/μs (4-V Step) • Excellent THD: –78 dBc at 10 MHz • Low Input Voltage Noise: 8.
9 nV/√Hz • Fast Overdrive Recovery: 8 ns • Fast Settling time (1% 4-V Step): 8 ns • Low Input Offset Voltage: ±1 mV • Low Input Bias Current: ±10 pA • High Output Current: 70 mA
2 Applications
• High-Impedance Data Acquisition Input Amplifiers • High-Impedance Oscilloscope Input Amplifiers • Wideband Photodiode Transimpedance Amplifiers • Wafer Scanning Equipment • Optical Time-Domain Reflectometry (OTDR) • High-Speed Time-of-Flight (TOF) Sensing
3 Description
The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope frontend amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.
The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/μs slew rate.
The high input impedance and low bias current provided by the JFET input are supported by the low 8.
9-nV/√Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.
Where lower speed with lower quiescent current is required, consider the OPA656.
Where unity-gain stability is not required, consider the OPA657.
Photo Diode
Typical Application
+6V
ID CD -VB
0.
1mF
10mF
OPA659
VOUT
ROUT
50W Load
RF
CF
0.
1mF
10mF
-6V
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
OPA659
SOT-23 (5) SON (8)
2.
90 mm × 1.
60 mm 3.
00...
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