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CMPA0527005F

CREE
Part Number CMPA0527005F
Manufacturer CREE
Description GaN HEMT
Published Aug 27, 2019
Detailed Description CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Tr...
Datasheet PDF File CMPA0527005F PDF File

CMPA0527005F
CMPA0527005F


Overview
CMPA0527005F 5 W, 0.
5 - 2.
7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
This device is matched to 50 ohms at the input and unmatched at the output.
This device operates from a 50 V rail and is intended to be used as a predriver from 0.
5 to 2.
7 GHz.
The transistor is available in a 6 leaded flange package.
PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.
5 - 2.
7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW Parameter 0.
5 GHz 1.
0 GHz 1.
5 GHz 2.
0 GHz 2.
7 GHz Small Signal Gain 20.
4 20.
8 21 20.
5 19.
5 Output Power 7.
8 9.
3 9.
1 8.
7 6.
6 Drain Efficiency 58.
5 53.
8 49.
2 47.
1 41.
5 Note: Measured in the CMPA0527005F-AMP1 application circuit.
Units dB W % Features • Up to 2.
7 GHz Operation • 8 W Typical Output Power • 20 dB Small Signal Gain • Application Circuit for 0.
5 - 2.
7 GHz • 50% Efficiency • 50 V Operation Rev 1.
2 - March 2020 Subject to change without notice.
www.
cree.
com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 150 -10, +2 -65, +150 225 1.
2 0.
5 245 40 Thermal Resistance, Junction to Case3 RθJC 18 Case Operating Temperature4 TC -40, +75 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.
cree.
com/RF/Document-Library 3 Measured for the CMPA0527005F at PDISS = 8.
4 W.
4 See also, Power Derating Curve on Page 5.
Electrical Characteristics (TC = 25˚C) Units Volts Volts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C Characteristics DC Characteristics1 Symbol Min.
Typ.
Max.
Units Conditions Gate Threshold Voltage VGS(th) -3.
8 -3.
0 -2.
3 VDC VDS = 10 V, ID = 1.
2...


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