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3NM60N

STMicroelectronics
Part Number 3NM60N
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Aug 7, 2019
Detailed Description STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package Datasheet - produc...
Datasheet PDF File 3NM60N PDF File

3NM60N
3NM60N

Overview
STL3NM60N N-channel 600 V, 1.
5 Ω, 2.
2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.
3 x 3.
3 HV package Datasheet - production data 1 2 3 4 8 7 6 5 5 6 7 8 PowerFLAT™ 3.
3x3.
3 HV Features Order code STL3NM60N RDS(on) max.
1.
8 Ω ID 2.
2 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Application • Switching applications Figure 1.
Internal schematic diagram 4G 3 2 1S 5 6 D 7 8 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Bottom View Order code STL3NM60N Table 1.
Device summary Marking Package 3NM60N PowerFLAT™ 3.
3 x 3.
3 HV Packaging Tape and reel November 2014 This is information on a product in full production.
DocID022795...


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