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3P6F6

STMicroelectronics
Part Number 3P6F6
Manufacturer STMicroelectronics
Description P-CHANNEL MOSFET
Published Aug 7, 2019
Detailed Description STN3P6F6 P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data ...
Datasheet PDF File 3P6F6 PDF File

3P6F6
3P6F6

Overview
STN3P6F6 P-channel -60 V, 0.
13 Ω typ.
, -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data Figure 1: Internal schematic diagram D(2, 4) G(1) Features Order code STN3P6F6 VDS -60 V RDS(on) max.
0.
16 Ω ID -3 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3) Int_schem_P_ch_nTnZ_SOT_223 Order code STN3P6F6 Table 1: Device summary Marking Package 3P6F6 SOT-223 Packing Tape and reel October 2016 DocID023758 Rev 5 This is information on a product in full production.
1/13 www.
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com Contents Contents STN3P6F6 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 9 4 Package information .
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10 5 Revision history .
12 2/13 DocID023758 Rev 5 STN3P6F6 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VDS VGS ID ID IDM PTOT(1) Tj Tstg Drain-source voltage Gate-source voltage Drain current (continuous) at Tpcb = 25 °C Drain current (continuous) at Tpcb= 100 °C Drain current (pulsed) Total dissipation at Tpcb = 25 °C Operating junction temperature range Storage temperature range -60 ± 20 -3 -2 -12 2.
6 - 55 to 175 V V A A A W °C °C Notes: (1)Pulse width is limited by safe operating area Symbol R...


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