NPN SILICON POWER TRANSISTORS - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD
2SC2073
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER TRANSISTORS
DESCRIPTION
The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc.
The UTC 2SC2073 is suitable for general purpose Power amplifier, vertical output application.
FEATURES
* High collector base voltage
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SC2073L- TA3-T
2SC2073G-TA3-T
TO-220
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment 123 BCE
Packing Tube
MARKING
www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd
1 of 3
QW-R221-021.
a
2SC2073
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
150 150
V V
Emitter-Base Voltage Collector Current Base Current
Continuous Peak
VEBO IC ICM IB
5.
0 1.
5 3.
0 0.
5
V A A A
Total Power Dissipation @ TC=25°C Derate above 25°C
PD
25 W 0.
2 W/°C
Junction Temperature Storage Temperature
TJ TSTG
-55~+150 -55~+150
°C °C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junction-to-Case
SYMBOL θJC
RATINGS 5.
0
UNIT °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
BVCBO BVCEO BVEBO
ICBO IEBO
IC=1.
0mA, IB=0 IC=5.
0mA, IB=0 IB=1.
0mA, IC=0 VCB=120V, IE=0 VEB=5.
0V, IC=0
ON CHARACTERISTICS (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage
hFE VCE(SAT) VBE(ON)
VCE=10V, IC=0.
5A IC=0.
5A...
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