C2073 NPN Epitaxial Silicon Transistor
TV VERTICAL DEFLECTION OUTPUT
Complement to A940 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=25W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC TJ TSTG
150 150
5 1. 5 25 150 -55~+150
V V V A W oC oC
TO-220 1. Base 2. Collector 3. Emitter
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage
BVCBO BVCEO BVEBO
IC=500 A, IE=0 IC=10mA, IB=0 IC=500 A, IE=0
Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product
ICBO VCB=120V, IE=0 hFE VCE=10V, IC=0. 5A VCE(sat) IC=500mA, IC=0. 5A COB VCB=10V, IE=0, f=1MHz fT VCE=10V, IC=0. 5A
Min Typ Max Unit 150 V 150 V
5 10 A
40 75 140 1V
50 pF 4 MHz
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Flat 2505, 25/F. , Nanyang Plaza, 57 Hung To Road, Kwun Tong, H. K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent. com. hk
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C2073 PDF File
