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900N15N

Infineon
Part Number 900N15N
Manufacturer Infineon
Description Power Transistor
Published Aug 2, 2019
Detailed Description s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)...
Datasheet PDF File 900N15N PDF File

900N15N
900N15N

Overview
s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSDSON-8 Marking 900N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=10 A...


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