PNP transistor - nexperia
Description
PBSS306PZ
100 V, 4.
1 A PNP low VCEsat (BISS) transistor
Rev.
3 — 26 July 2011
Product data sheet
1.
Product profile
1.
1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NZ.
1.
2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
1.
3 Applications
High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control
High efficiency due to less heat generation
Smaller Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
High-voltage power switches (e.
g.
motors, fans)
Automotive applications
1.
4 Quick reference data
Table 1.
Symbol VCEO
IC ICM RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation resistance
Conditions open base
single pulse; tp ≤ 1 ms IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 ; Tamb = 25 °C
Min Typ Max Unit - - -100 V
- - -4.
1 A - - -8.
2 A - 56 80 mΩ
Nexperia
PBSS306PZ
100 V, 4.
1 A PNP low VCEsat (BISS) transistor
2.
Pinning information
Table 2.
Pin 1 2 3 4
Pinning information Symbol Description B base C collector E emitter C collector
Simplified outline
4
123
SOT223 (SC-73)
Graphic symbol
2, 4
1 3
sym028
3.
Ordering information
Table 3.
Ordering information
Type number
Package
Name
PBSS306PZ
SC-73
4.
Marking
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version SOT223
Table 4.
Marking codes Type number PBSS306PZ
5.
Limiting values
Marking code S306PZ
Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO VCEO VEBO IC ICM Ptot
collector-base voltage collector-emitter voltage emitter-base voltage collector current peak ...
Similar Datasheet
