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2N7000

TAITRON
Part Number 2N7000
Manufacturer TAITRON
Description N-Channel MOSFET
Published Jul 7, 2019
Detailed Description N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features ...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000


Overview
N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power D...



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