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MJD31CA

nexperia
Part Number MJD31CA
Manufacturer nexperia
Description 3A NPN high power bipolar transistor
Published Jul 3, 2019
Detailed Description MJD31CA 100 V, 3 A NPN high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description NPN h...
Datasheet PDF File MJD31CA PDF File

MJD31CA
MJD31CA


Overview
MJD31CA 100 V, 3 A NPN high power bipolar transistor 23 May 2019 Preliminary data sheet 1.
General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD32CA 2.
Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3.
Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 4 V; IC = 1 A; Tamb = 25 °C VCE = 4 V; IC = 3 A; Tamb = 25 °C Min Typ Max Unit - - 100 V --25 10 - 3A 5A 50 Nexperia MJD31CA 100 V, 3 A NPN high power bipolar transistor 5.
Pinning information Table 2.
Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector 3 E emitter mb C mounting base; connected to collector 2 13 DPAK (SOT428) Graphic symbol E B C; mb aaa-029889 6.
Ordering information Table 3.
Ordering information Type number Package Name MJD31CA DPAK Description Version plastic, single-ended surface-mounted package (DPAK); 3 leads; SOT428 2.
285 mm pitch; 6 mm x 6.
6 mm x 2.
3 mm body 7.
Marking Table 4.
Marking codes Type number MJD31CA Marking code MJD31CA 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC601134).
Symbol VCEO VEBO IC ICM Ptot Tj Tamb Tstg Parameter collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation junction temperature ambient temperature storage temperature Conditions open base open collector s...


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