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NE76084S

NEC
Part Number NE76084S
Manufacturer NEC
Description LOW NOISE L TO Ku BAND GaAs MESFET
Published Jun 28, 2019
Detailed Description Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE...
Datasheet PDF File NE76084S PDF File

NE76084S
NE76084S

Overview
Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE NF = 1.
6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • LG = 0.
3 µm, WG = 280 µm • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL DESCRIPTION The NE76084S provides a low noise figure and high associated gain through 14 GHz.
The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
The device features a recessed 0.
3 micron gate and triple epitaxial technology.
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
NOISE FIGURE AND ASSOCIATED GAIN vs.
FREQUENCY VDS = 3 V, IDS = 10 mA 4 3.
5 Ga 3 2.
5 2 1.
5 1 NF 0.
5 0 1 24 21 18 15 12 9 6 3 0 10 20 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NE76084S2 84S SYMBOLS NFOPT1 GA P1dB IDSS VP gm IGSO RT...


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