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H06N60E

Part Number	H06N60E
Manufacturer	HI-SINCERITY
Description	N-Channel Power Field Effect Transistor
Published	Jun 16, 2019
Detailed Description	HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. :...
Datasheet	H06N60E PDF File

Overview

HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200402 Issued Date : 2004.
04.
01 Revised Date : 2005.
05.
12 Page No.
: 1/6 H06N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suit...

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