N-Channel MOSFET - Low Power Semi
Description
Preliminary Datasheet
LPM2302
LPM2302 20V/3.
5A N-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed.
Ordering Information
LPM2302- □ □ □
F: Pb-Free
Package Type B3: SOT23-3
Features
■ 20V/3.
5A, RDS(ON)=50mΩ(Typ.
)@VGS=4.
5V
■ 20V/3.
0A, RDS(ON)=75mΩ(Typ.
)@VGS=2.
5V
■ Super high density cell design for extremely low RDS(ON)
■ SOT23 Package
Applications
Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card
Marking Information
Device
Marking
LPM2302B3F A2sHB
Package
SOT23-3
Shipping
3K/REEL
Pin...
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