DatasheetsPDF.com

BUK661R9-40C

nexperia
Part Number BUK661R9-40C
Manufacturer nexperia
Description N-channel TrenchMOS intermediate level FET
Published Jun 4, 2019
Detailed Description BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data sheet 1. Product profil...
Datasheet PDF File BUK661R9-40C PDF File

BUK661R9-40C
BUK661R9-40C

Overview
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev.
1 — 18 August 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)