30V N-Channel MOSFET - GOOD-ARK
Description
Main Product Characteristics
V(BR)DSS RDS(ON)
ID
30V 18mΩ
28A
SSFD3912
30V N-Channel MOSFET
D
S G
Features and Benefits
TO-252 (DPAK)
Advanced MOSFET process technology Ideal for high efficiency switched mode power supplies
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Schematic Diagram
Description
The SSFD3912 utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.
Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage
VDS 30 VGS ±20
Drain Current – Continuous (TC=25°C)
Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2
28 ID
17.
7
IDM 112
EAS 18
IAS 19
Power Dissipation (TC=25°C) Pow...
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