DatasheetsPDF.com

FQA10N60C

Fairchild Semiconductor
Part Number FQA10N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published May 11, 2019
Detailed Description FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field ef...
Datasheet PDF File FQA10N60C PDF File

FQA10N60C
FQA10N60C


Overview
FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • 10A, 600V, RDS(on) = 0.
73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3PN FQA Series G!...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)