Silicon Fast Recovery Diode - GeneSiC
Description
Silicon Fast Recovery Diode
Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive
Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
FR12B05 thru FR12JR05
VRRM = 100 V - 600 V IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR12B(R)05 FR12D(R)05 FR12G(R)05
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage
VRRM
VRMS VDC
100 200 400
70 140 280 100 200 400
Continuous forward current
IF
TC ≤ 100 °C
12
12
12
FR12J(R)05 Unit
600 V 420 V 600 V 12 A
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.
3 ms
Tj Tstg
180
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
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