Silicon Carbide Junction Transistor - GeneSiC
Description
Normally – OFF Silicon Carbide Junction Transistor
Features
• 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • > 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth
Package
GR1500JT17-263
VDS RDS(ON) ID (@ 25°C) hFE (@ 25°C)
= 1700 V = 1.
5 Ω = 2A = 100
TAB Drain
1G2G3RS4S5S6S7S
7L D2PAK (TO-263-7L)
Applications
Please note: The Source and Gate Return pins are not exchangeable.
Their exchange might lead to malfunction.
• Down Hole Oil Drilling, Geothermal Instrumentation • Hybrid Electric Vehicles (HEV) • Solar Inverters • Swi...
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