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WFP630

Part Number	WFP630
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Published	Apr 24, 2019
Detailed Description	WFP630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ ...
Datasheet	WFP630 PDF File

Overview

WFP630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.
4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
G D S TO220 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD ...

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