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C6079

Toshiba
Part Number C6079
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Apr 21, 2019
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications 2SC6079...
Datasheet PDF File C6079 PDF File

C6079
C6079

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications 2SC6079 Unit: mm Low collector saturation voltage: VCE (sat) = 0.
5 V (max)（IC = 1A） High-speed switching: tstg = 0.
4 μs (typ) www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 2.
0 4.
0 1.
5 1 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR 3 : EMITTER JEDEC ― JEI...


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