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3418

FUMAN
Part Number 3418
Manufacturer FUMAN
Description POWER MOSFET
Published Apr 8, 2019
Detailed Description SHENZHEN FUMAN ELECTRONICS CO., LTD. 3418 (：S&CIC0937) POWER MOSFET WAFER DATASHEET Feature  30V P-channel MOSFET ...
Datasheet PDF File 3418 PDF File

3418
3418

Overview
SHENZHEN FUMAN ELECTRONICS CO.
, LTD.
3418 (：S&CIC0937) POWER MOSFET WAFER DATASHEET Feature  30V P-channel MOSFET High Dense Design.
 Ultra low On-Resistance.
 RDS(ON) <53mΩ @ VGS=-10V  RDS(ON) <65mΩ @ VGS=-4.
5V  Reliable and Rugged  Gross die: 38K D 3 xxxxxx 12 GS SOT-23 Applications  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
Die Description  Wafer Diameter: 8 inchs.
(±0.
1 inchs)  Wafer Thickness: 8 mils.
(±0.
6mils)  Die Size: 960 µm ×810µm.
(Including scribe line)  Scribe Line Width: 60µm  Metallization: Frontside: AL/Cu, Backside: Ti/Ni/Ag.
 Metal Thickness: Frontside: 4µm, Backside: 1.
4µm.
 Bonding Area: Gate: 120µm ×120...


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