DatasheetsPDF.com

2SC2879

Part Number	2SC2879
Manufacturer	HGSemi
Description	HG RF POWER TRANSISTOR
Published	Apr 8, 2019
Detailed Description	HG Semiconductors 2SC2879HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION Designed prim...
Datasheet	2SC2879 PDF File

Overview

HG Semiconductors 2SC2879HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use) FEATURES • Specified 12.
5V, 28MHz Characteristics • PO = 100W PEP • GP = 15.
2 Typ.
at 100 W/28 MHz • IMD3 = -24 dBc max.
at 100 W(PEP) • Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α 1 H Lb 3 w2 M C A c p U2 5 D1 U3 w1 M A B 2 Q 1.
Collector 2.
EMITTER 3.
BASE 4.
EMITTER 5.
FIN NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE.
UNIT A b c mm 7.
27 6.
17 5.
82 5.
56 0.
16 0.
10 inches 0.
286 0.
243 0.
229 0.
219 0.
006 0.
004 D D1 F H L p Q q U1 U2 U3 12.
86 12.
83 2.
67 28.
45 7.
...

Similar Datasheet

2SC2800 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric
2SC2808 Epitaxial Planar NPN Silicon Transistor - Rohm
2SC2809 SILICON POWER TRANSISTOR - SavantIC
2SC2809 NPN Transistor - INCHANGE
2SC2810 SILICON POWER TRANSISTOR - SavantIC
2SC2810 Silicon NPN Power Transistors - Inchange Semiconductor
2SC2812 Silicon Epitaxial Planar Transistor - GME
2SC2812 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2812 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)