650V N Channel Power MOSFET - JINAN JINGHENG
Description
R
SEMICONDUCTOR
FEATURES
● RDS(ON)<1.
0Ω @ VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS directive.
MECHANICAL DATA
● Case:TO-220,ITO-220,TO-262,TO-263 Package
10N65 650V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
650 1.
0 @ VGS =10V
TO-220AB
10N65
ITO-220AB
10N65F
ID (A)
10
Ordering Information
Part No.
10N65-TU 10N65F-TU 10N65E-TU 10N65D-TU 10N65D-TR
Package
TO-220 ITO-220 TO-262 TO-263 TO-263
Packing
50pcs / Tube 50pcs / Tube 50pcs / Tube 50pcs / Tube 800pcs / 13"Reel
1 23
TO-262
10N65E
1 23
TO-263
10N65D
Pin Definition:
1.
Gate 2.
Drain 3.
Source
23 1
Block Diagram
D
G
ABSOLUTE MAXIMUM RATINGS
(TC=25 C , unless otherwise specified)
PARAMETER Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current
Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed(Note 3)
SYMBOL VDSS
VGSS ID IDM
EAS
RATINGS 650 ±30 10 38
608
UNIT V V A A
mJ
S
Power Dissipation
TO-220/TO-263/TO-262 I...
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