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100N03

Part Number	100N03
Manufacturer	GFD
Description	MOSFET
Published	Mar 12, 2019
Detailed Description	DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . ...
Datasheet	100N03 PDF File

Overview

DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .
It can be used in a wide Vanety of applications .
100N03 VDS 30V RDS(ON) ID 3.
5mΩ 100A GENERAL FEATURES � VDS = 30 V, ID = 100 A RDS(ON) < 5.
5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BR...

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