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2301

Part Number	2301
Manufacturer	GFD
Description	P-Channel Enhancement Mode Power MOSFET
Published	Mar 12, 2019
Detailed Description	2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2301 uses advanced trench technology to provide excellent ...
Datasheet	2301 PDF File

Overview

2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.
5V RDS(ON) < 110mΩ @ VGS=-4.
5V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 2301 2301 SOT-23 Re...

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