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35CN10N

Infineon
Part Number 35CN10N
Manufacturer Infineon
Description Power-Transistor
Published Jan 18, 2019
Detailed Description IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Exc...
Datasheet PDF File 35CN10N PDF File

35CN10N
35CN10N

Overview
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package Marking PG-TO263-3 34CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified P...


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