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Si2305

SiPU
Part Number Si2305
Manufacturer SiPU
Description P-Channel MOSFET
Published Nov 28, 2018
Detailed Description Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged...
Datasheet PDF File Si2305 PDF File

Si2305
Si2305

Overview
Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.
0A 95@ VGS=-4.
5V 115 @ VGS=-2.
5V NOTE The Si2305 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -4.
0 IDM -12 IS -1.
25 PD 1.
25 TJ,TSTG -55 to 150 Unit V V A A A W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 /W 1 Si2305 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Gate Threshold Voltage...


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