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HM6N10PR

H&M Semiconductor
Part Number HM6N10PR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM6N10PR uses advanced trench technology and design to provide e...
Datasheet PDF File HM6N10PR PDF File

HM6N10PR
HM6N10PR

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply HM6N10PR D G S Schematic diagram HM6N10PR SOT-89 top view Package Marking and Ordering Information Device Marking Device Device Package HM6N10PR HM6N10PR SOT-89-3L Reel Size Ø330mm Tape width 12mm Quantity 250 0 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum P...


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