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15J331

Toshiba
Part Number 15J331
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Nov 21, 2018
Detailed Description GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High-Power Switching Applications Mo...
Datasheet PDF File 15J331 PDF File

15J331
15J331

Overview
GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High-Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.
10 μs (typ.
) • Low saturation voltage: VCE (sat) = 1.
75 V (typ.
) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms VCES VGES IC ICP IF IFM PC Tj Tstg 600 ±20 15 30 15 30 70 150 −55 to 150 V V A A A W °C °C ...


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