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2N6851

TT
Part Number 2N6851
Manufacturer TT
Description P-CHANNEL POWER MOSFET
Published Nov 21, 2018
Detailed Description P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screeni...
Datasheet PDF File 2N6851 PDF File

2N6851
2N6851


Overview
P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage -200V VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C -4.
0A ID IDM(1) Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current -2.
4A -16A PD Total Power Dissipation @ Tcase = 25°C 25W Linear De-rating Factor @ Tcase ≥ 25°C 200mW/°C dv/dt(2) Peak Diode Recovery dv/dt -5V/ns TJ Operating Temperature Range -55°C to +150°C Tstg Storage Temperature Range -55°C to +150°C THERMAL CHARACTERISTICS Symbol Parameters RθJC Thermal Resistance, Junction To Case Max 5 Units °C/W Notes: 1) Repetitive Rating; Pulse width limited by maximum junction temperature 2) ISD ≤ -4.
0A, di/dt ≤ -120A/µs, VDD ≤ -200V, TJ ≤ 150°C 3) Pulse width ≤ 380 µs; Duty Cycle ≤ 2% 4) By design.
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