|
Part Number
|
B9NB50 |
|
Manufacturer
|
STMicroelectronics |
|
Published
|
Nov 18, 2018 |
|
Description
|
N-Channel MOSFET |
|
Datasheet
|
 B9NB50 PDF File
|
Overview
STB9NB50
N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET
TYPE ST B9NB50
VDSS 500 V
RDS(on) < 0.
85 Ω
ID 8.
6 A
s TYPICAL RDS(on) = 0.
75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s VERY LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s LOW LEAKAGE CURRENT s APPLICATION ORIENTED
CHARACTERIZATION s FOR SMD D2PAK VERSION CONTACT
SALES OFFICE
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)
123
I2PAK TO-262 (suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VD GR VGS
ID ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC
IDM(•) Ptot
Drain Current (pulsed) Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Pe...
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