2N4910 thru 2N4912 (SILICON)
~~CASE 80
- NPN silicon transistors designed for driver circuits, switching, and amplifier applications. Complement to PNP 2N4898 thru 2N4900.
Collector connected to case MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous*
Base Current - Continuous Total Device Dissipation T C = 25 0 C
Derate above 250 C Operating & Storage Junction
Temperature Range
Symbol 2N4910 2N4911 2N4912
VCEO 40 60
80
VCB VEB IC*
40 60 -5. 0 _1. 0 -4. 0
. . IB -1. 0
P D 25
80
. .
. . .
. . . .
-0. 143TJ' Tstg --65 to +200-
Unit
Vdc Vdc Vdc Adc
Adc Watts mW/oC °c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case eJC
Max
7. 0
Unit
°C/W
* The 1. 0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 4. 0 Amp maximum value is based upon actual current-handling capability of the device (see Figure 5).
FIGURE 1- PDWER·TEMPERATURE D...
2N4912 PDF File
