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PFB10N80A

Wing On
Part Number PFB10N80A
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low ...
Datasheet PDF File PFB10N80A PDF File

PFB10N80A
PFB10N80A


Overview
PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 1.
15 Ω (Typ.
) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFI10N80A/PFB10N80A 750V N-Channel MOSFET BVDSS = 750 V RDS(on) = 1.
15 Ω ID = 8.
0 A I2-PAK 1 2 3 1.
Gate 2.
Drain 3.
Source Drain  Gate  ● ◀▲ ● ●  Source D2-PAK 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note...


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