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PFB6N80G

Wing On
Part Number PFB6N80G
Manufacturer Wing On
Description N-Channel MOSFET
Published Oct 5, 2018
Detailed Description PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low In...
Datasheet PDF File PFB6N80G PDF File

PFB6N80G
PFB6N80G


Overview
PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.
2 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 2.
4 Ω (Typ.
) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFI6N80G / PFB6N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 2.
4 Ω ID = 5.
5 A TO-262 1 2 3 1.
Gate 2.
Drain 3.
Source Drain  Gate  ● ◀▲ ● ●  Source TO-263 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitiv...


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