MOSFET - TAITRON
Description
Enhancement Mode MOSFET (N-Channel)
2N7002E
Enhancement Mode MOSFET (N-Channel)
Features
• High density cell design for low RDS(ON).
• Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS Compliance, Halogen Free
SOT-23
Mechanical Data
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
008 gram
Maximum Ratings @ TA=25°C unless noted otherwise
Symbol
VDSS VDGR
VGSS
ID IDP
Description
Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed
PD Total Power Dissipation
TJ TSTG RθJA
Junction Temperature Storage Temperature Junction to Ambient
2N7002Z
60 60 ±20 ±40 300 800 200 1.
6 150 -55 ~ +150 625
Unit
V V V V mA mA mW mW/°C °C °C °C/W
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