MOSFET - ON Semiconductor
Description
2N7002E
Small Signal MOSFET
Single N−Channel, 60 V, 310 mA, 2.
5 Ohm
Features
• Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Low Side Load Switch • Level Shift Circuits • DC−DC Converter • Portable Applications i.
e.
DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1) Steady State
VDSS
60
V
VGS
±20
V
ID TA = 25°C TA = 85°C
mA 260 190
t<5s
Power Dissipation (Note 1) Steady State t<5s
TA = 25°C TA = 85°C
PD
310 220
mW 300 420
Pulsed Drain Current (tp = 10 ms)
Operating Junction and Storage Temperature Range
IDM
1.
2
A
TJ, TSTG −55 to
°C
+150
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
417 °C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
300
1.
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces)
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V(BR)DSS 60 V
RDS(on) MAX
3.
0 W @ 4.
5 V 2.
5 W @ 10 V
ID MAX (Note 1)
310 mA
Simplified Schematic N−Channel 3
1
2 (Top View)
3
1 2
SOT−23 CASE 318 STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
Drain 3
703 MG G
1 Gate
2 Source
703 = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
2N7002ET1G, S2N7002ET1G
2N7002ET7G, S2N7002E...
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