N-Channel MOSFET - LITE-ON
Description
N-Channel 60V MOSFET
Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV)
Application Portable appliances
2N7002E
BVDSS=60V , RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.
5V ID=0.
43A
Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted)
Parameter
Symbol Marking
2N7002E E72
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
ID(1) 0.
43
Pulsed Drain Current(1)
Power Dissipation
Ta=25℃ Ta=100℃
Operating Junction and Storage Temperature Range
IDM(2) PD TJ, Tstg
1.
7 0.
83 0.
33 -55 to150
Diode Forward Current
IS(1) 0.
4
Thermal Characteristics
Symbol
Symbol
Typ.
Thermal Resistance JCunhcatrioanc-tteor-iCstaisce
RθJC
189
Notes：
(1) Surface Mounted on 1 in 2 pad area, t≦10sec
(2) Pulse width ≦300us, duty cycle ≦2％ (3) Unit mounted on glass-epoxy substrate with 1oz/ft2_1 x 1 mm copper pad per pin.
Unit
V V A A W ℃ A
Unit ℃/W
Rev.
02,...
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