DatasheetsPDF.com

3SK306

Part Number	3SK306
Manufacturer	Panasonic
Description	Silicon N-Channel MOS
Published	Sep 5, 2018
Detailed Description	High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Feature...
Datasheet	3SK306 PDF File

Overview

High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product.
q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
3SK302 0.
65±0.
15 +0.
2 2.
8 –0.
3 +0.
2 1.
5 –0.
3 Unit : mm 0.
65±0.
15 0.
5R 41 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 32 +0.
1 0.
4 –0.
05 0 to 0.
1 +0.
1 0.
16 –0.
06 +0.
2 1.
1 –0.
1 0.
8 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Drain-Source voltage Gate 1-Source voltage Gate 2-Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature Symb...

Similar Datasheet

3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier - Hitachi Semiconductor
3SK302 Silicon N-Channel MOS - Panasonic
3SK306 Silicon N-Channel MOS - Panasonic
3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier - Hitachi Semiconductor
3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier - Hitachi Semiconductor
3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier - Hitachi Semiconductor
3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier - Hitachi Semiconductor
3SK320 N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP/ MIX) - Toshiba Semiconductor
3SK321 Silicon N-Channel Dual Gate MOS FET - Hitachi Semiconductor
3SK322 Silicon N-Channel Dual Gate MOS FET - Hitachi Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)