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STN7120DN

Part Number	STN7120DN
Manufacturer	STANSON
Description	N-Channel Enhancement Mode MOSFET
Published	Sep 3, 2018
Detailed Description	STN7120DN N Channel Enhancement Mode MOSFET 50A DESCRIPTION STN7120DN uses Trench MOSFET technology that is uniquely opt...
Datasheet	STN7120DN PDF File

Overview

STN7120DN N Channel Enhancement Mode MOSFET 50A DESCRIPTION STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION POWER PACK 5x6 DD DD FEATURE l 60V/10A, RDS(ON) = 12mΩ @VGS = 10V 60V/8A, RDS(ON) = 15mΩ @VGS = 4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) STANSON TECHNOLOGY 120 Bentley Sq...

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STN7120DN N-Channel Enhancement Mode MOSFET - STANSON

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