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HY1115D

HOOYI
Part Number HY1115D
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
Published Aug 19, 2018
Detailed Description HY1115D Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source...
Datasheet PDF File HY1115D PDF File

HY1115D
HY1115D

Overview
HY1115D Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy L=0.
5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V Rating 150 ±20 150 -55 to 150 10 40** 10 7 50 20 2.
5 110 33*** Electrical Characteristics (T A = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W °C/W mJ Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Thr...


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