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PDS04N15

Potens semiconductor
Part Number PDS04N15
Manufacturer Potens semiconductor
Description N-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 150V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using tre...
Datasheet PDF File PDS04N15 PDF File

PDS04N15
PDS04N15

Overview
150V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration DDDD SS SG G D S PDS04N15 BVDSS 150V RDSON 65m ID 4A Features  150V,4A, RDS(ON) =65mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – De...


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