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1N3671AR

GeneSiC
Part Number 1N3671AR
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Aug 7, 2018
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive N...
Datasheet PDF File 1N3671AR PDF File

1N3671AR
1N3671AR

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.
3 ms 1N3671A (R) 800 560 800 12 240 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3671A (R) Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF = 12 A, Tj = 25 °C IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C...


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