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2SA1308

Part Number	2SA1308
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 17, 2018
Detailed Description	:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector ...
Datasheet	2SA1308 PDF File

Overview

:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm FEATURES .
Low Collector Saturation Voltage : VcE(sat)=-0.
4V(Max.
) at Ic=-3A .
High Speed Switching Time : t s tg=l.
0-«s(Typ.
.
Complementary to 2SC3308.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -100 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -80 V -7 V Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range ic ICP PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta==25°C) CHARACTERISTIC SYMBOL -5 A -8 30 W 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER 150 °C -55-150 °...

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