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2SA1243

Part Number	2SA1243
Manufacturer	Toshiba
Description	SILICON PNP EPITAXIAL TYPE TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1243 POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I bl...
Datasheet	2SA1243 PDF File

Overview

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1243 POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I blAbt AP PLICATIONS.
FEATURES .
Good Linearity of hEE .
Complementary to 2SC3073 &8MAX.
I52±0i2 F Unit in mm Si o .
0.
6 MAX -J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C T J T stg RATING UNIT -30 V -30 V -5 V -3 A -0.
6 A 1.
0 W 10 150 -55 -150 °C o C a 95 MAX.
.
! j Q6±ai5 | ) li M s o w H a6MAX.
a .
D 2.
3 2.
3 gpi efu rfjJL X ...

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