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2SA1120

Part Number	2SA1120
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 17, 2018
Detailed Description	: 2SA1120 , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FE...
Datasheet	2SA1120 PDF File

Overview

: 2SA1120 , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS.
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES • MIN h F E of 70 at-2V, -4A.
-5A Rated Collector Current.
• MAX V CE ( sat ) of -1.
0V at -4A I c .
10W at 25° C Case Temperature.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO Collector Current DC _IC_ Pulsed(Note 1) ICP -5 Emitter Current DC IE Pulsed(Note 1) *EP Collector Power Dissipation Ta=25°C Tc=25°C 1.
0 10 Junction Temperature Storage Temperature Range u_ L stg 150 -55^150 Note 1.
Pulse Test : Pulse Width=10ms (Max.
) Duty Cycle=30%(Max.
) ...

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