DatasheetsPDF.com

2SA1094

Part Number	2SA1094
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Jul 17, 2018
Detailed Description	: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage :...
Datasheet	2SA1094 PDF File

Overview

: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition Frequency : fx=70MHz (Typ.
) • Complementary to 2SC2564.
• Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power .
Dissipation CTc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO VEBO ic IE RATING UNIT -140 -140 -5 -12 12 PC Ti -stg 120 150 -55^150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER 2 - 34 A 1 A Weight : 10.
8g ELEC...

Similar Datasheet

2SA100 Ge PNP Drift Transistor - ETC
2SA1001 Silicon PNP Power Transistor - Inchange Semiconductor
2SA1002 Silicon PNP Power Transistor - INCHANGE
2SA1003 Silicon PNP Power Transistor - Inchange Semiconductor
2SA1006 PNP/NPN TRANSISTOR - NEC
2SA1006 Silicon POwer Transistors - SavantIC
2SA1006A PNP/NPN TRANSISTOR - NEC
2SA1006A PNP Transistor - INCHANGE
2SA1006A Silicon POwer Transistors - SavantIC
2SA1006B PNP/NPN TRANSISTOR - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)